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Active Toshiba NPN Silicon Bipolar Transistors 50V 120 DC hFE 150mW VESM Surface Mount 22kOhms 100mA

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Active Toshiba NPN Silicon Bipolar Transistors 50V 120 DC hFE 150mW VESM Surface Mount 22kOhms 100mA

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Category :Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max) :100 mA
Product Status :Active
Transistor Type :NPN - Pre-Biased
Mounting Type :Surface Mount
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series :-
Vce Saturation (Max) @ Ib, Ic :300mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :50 V
Supplier Device Package :VESM
Resistor - Base (R1) :22 kOhms
Mfr :Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max) :100nA (ICBO)
Power - Max :150 mW
Package / Case :SOT-723
DC Current Gain (hFE) (Min) @ Ic, Vce :120 @ 1mA, 5V
Base Product Number :RN1112
Description :TRANS PREBIAS NPN 50V 0.1A VESM
Stock :In Stock
Shipping Method :LCL, AIR, FCL, Express
Payment Terms :L/C, D/A, D/P, T/T, Western Union,
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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
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